suface mount package. s mhop microelectronics c orp. a symbol v ds v gs i dm 95 w a p d c 1.32 -55 to 150 i d units parameter 20 8 48 c/w v v 12 t a =25 c gate-source voltage drain-source voltage thermal characteristics product summary v dss i d r ds(on) (m ) max 20v 8a 18.0 @ vgs=2.5v 12.5 @ vgs=4.5v features super high dense cell design for low r ds(on) . rugged and reliable. absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous b -pulsed a a maximum power dissipation operating junction and storage temperature range t j , t stg thermal resistance, junction-to-ambient r ja ver 2.1 www.samhop.com.tw jun,14,2016 1 details are subject to change without notice. t a =25 c t a =70 c a t a =70 c w dual n-channel enhancement mode field effect transistor SP8611 green product esd protected. 6.4 0.84 s mini 8 p i n 1 b 15.0 @ vgs=3.1v 13.5 @ vgs=4.0v 14.0 @ vgs=3.7v s1 g1 s2 g2 d1 d1 d2 d2
symbol min typ max units bv dss 20 v 1 i gss 1 ua v gs(th) 0.5 v 10.5 g fs 23 s v sd q g 110 nc 406 nc q gs 1338 nc q gd 917 t d(on) 11 ns t r 2.2 ns t d(off) 5.2 ns t f ns gate-drain charge switching characteristics gate-source charge v dd =16v i d =4a v gs =4.5v r gen =6 ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =4.5v , i d =4a v ds =5v , i d =4a r ds(on) drain-source on-state resistance forward transconductance diode forward voltage i dss ua gate threshold voltage v ds =v gs , i d =1ma v ds =16v , v gs =0v v gs = 8v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua on characteristics v gs =2.5v , i d =2a 12.5 14.0 18.0 m ohm v ds =16v,i d =8a, v gs =4.5v drain-source diode characteristics and maximum ratings v gs =0v,i s =8a 0.86 1.2 v SP8611 ver 2.1 www.samhop.com.tw jun,14,2016 2 0.9 1.5 v ds =16v,i d =8a,v gs =4.5v 11.0 m ohm v gs =4.0v , i d =4a 13.5 12.0 m ohm v gs =3.1v , i d =4a 15.0 9.0 11.0 8.5 10.0 notes a.pulse test:pulse width < 10us, duty cycle < 1%. b.drain current limited by maximum junction temperature. c.mounted on fr4 board of 1 inch 2 , 2oz. _ _ 11.5 m ohm v gs =3.7v , i d =4a 14.0 9.5
SP8611 ver 2.1 www.samhop.com.tw jun,14,2016 3 0 0 20 120 100 80 60 40 150 125 100 75 50 25 175 t a - ambient temperature - c dt - percentage of rated power - % derating factor of forward bias safe operating area 0 0 0.5 3 2.5 2 1.5 1 150 125 100 75 50 25 175 t a - ambient temperature - c pt - total power dissipation - w total power dissipation vs. ambient temperature mounted on fr-4 board of 1 inch 2 , 2oz forward bias safe operating area v ds - drain to source voltage - v i d - drain current - a 0.1 1 10 20 10 1 0.1 0.03 v gs =4.5v single pulse t a =25 c 100 r d s (on) limit 10 us 100us 1ms 10 m s 1s dc 100ms transient thermal resistance vs. pulse width 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 0.1 single pulse pw - pulse width - s rth(ch-a) - transient thermal resistance - c/w 0.0001 mounted on fr-4 board of 1 inch 2 , 1oz
SP8611 ver 2.1 www.samhop.com.tw jun,14,2016 4 v ds - drain to source voltage - v i d - drain current - a drain current vs. drain to source voltage 0.01 0 0.1 100 10 1 2.5 2 1.5 1 0.5 v gs - gate to source voltage - v i d - drain current - a forward transfer characteristics 3 25 c 75 c 125 c t a = -25 c -50 1.1 0.9 0.5 150 100 50 0 t ch - channel temperature - c v gs(off) - gate to source cut-off voltage - v gatebto soure cut-off voltage vs. channel temperature i d = 1.0ma 0.01 0.01 0.1 100 10 1 100 10 1 0.1 i d - drain current - a forward transfer admittance vs. drain current 1.0 t a = -25 c 25 c 75 c 125 c 0 10 40 30 20 100 10 1 0.1 i d - drain current - a r ds(on) - drain to source on-state resistance - m drain to source on-state resistance vs. drain current v gs = 2.5 v 3.7 v 0 0 10 40 30 20 8 6 4 2 v gs - gate to source voltage - v r ds(on) - drain to source on-state resistance - m drain to source on-state resistance vs. gate to source voltage i d = 4 a 12 10 3.1 v 0.6 0.7 0.8 4.5 v 4.0 v 0 0 10 30 20 1 0.8 0.6 0.4 0.2 v gs = 4.5 v 3.1 v 3.7 v 2.5 v 4.0 v
SP8611 ver 2.1 www.samhop.com.tw jun,14,2016 5 0 -50 15 10 5 150 100 50 0 t ch - channel temperature - c r ds(on) - drain to source on-state resistance - m drain to source on-state resistance vs. channel temperature 20 i d = 4a 25 30 4.5 v 4.0 v 3.7 v 3.1 v v gs = 2.5 v 10 0.1 100 1000 10 1 i d - drain current - a t d(on) , t r , t d(off) , t f - switching time - ns switching characteristics v dd = 16.0 v v gs = 4.5 v r g = 6 t d(on) t d(off) t r t f q g - gate charge -nc v gs - gate to drain voltage - v dynamic input characteristics 0 0 4 3 2 12 9 6 3 i d = 8a 1 10 v 16 v 15 v dd = 4 v 0.01 0.1 100 10 1 0.6 0.4 0.2 0 v f(s-d) - source to drain voltage - v i f - diode forward current - a source to drain diode forward voltage 1.2 1.0 0.8 v gs = 0 v 1.4
SP8611 www.samhop.com.tw jun,14,2016 6 package outline dimensions top view s mini 8 bottom view side view symbols millimeters a a1 b c d e e1 min max 0.700 0.900 0.000 0.050 0.240 0.350 0.080 0.250 e l l1 01 0.650 bsc 0.200 0.450 0.000 0 o 12 o nom 0.800 0.300 0.152 0.375 0.100 10 o l1 d l e e1 e 01 c a a1 2.800 2.900 3.000 2.700 2.800 2.900 2.200 2.300 2.400 b ver 2.1
8611 xxxxxx top marking definition s mini 8 product no. wafer lot no. production date (1,2 ~ 9, a,b.....) production month (1,2 ~ 9, a,b,c) production year (2009 = 9, 2010 = a.....) smc internal code no. pin 1 SP8611 www.samhop.com.tw jun,14,2016 7 ver 2.1 samhop logo
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